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| This report presents the qual ification test results-on-NE272 series. 2/8 1.Test -- Device NE272 AI GaAs /In GaAs hetero-junction FEr 2.Qualification A serres of tests Qual ification tests consists of following rierns l)High 2)High The The test test temperature temperature conditions parameters DC Bias Reverse and were Test Bias ( HT pT ) Test are before ( HT RBT ) shown and in after Table the 1. tests. sample size measured bk~t Resu lli The l)High The summary of qual ification DC Bias test Test has been result is presented in Table 3-1,3-2. Temperature followingfcondition ID=10mA adopted: VDs=2V The The The test test T ch= 175C results elapsed of all are for shown 5000 in hours Table under are 3-1 the and Fig.1 (1)-Fig.1(8) condition. crilteria. above the delta changes parameters withjn 2)High The temperature following '4V results elapsed of all DC Bias condition Test has been adopted: VGDS=. T ch= 150C are for shown 5000 parameters in hours are Table under within 3-2 the and Fig.2(1)-F:jg.2(8). condition. criteria. The The The test test changes above the delta 4.Conclusion From t is the concluded series of that: qual ification test results described above l)There 2) There is no degradation test. is no degradation test. UP to 5000 hours at Tch=l75C UP to 5000 hours at Tch=lSOC in High temperature in High temperature DC bias Reverse bias NE272 is qua fied for high rei iabi ity appl ications. 3/g Table 1 ., Test Item and Test concLi1i.Q11 Table 2 Delta Parameters and Cri~ Parameter Test condition Delta Criteria loss VDs=2V, VGS=OV +20% 20% gm Vos=2V, 10=10mA +20% 20% VGS(off) Vos=2V, 10=100 11 A +20% ---20% IGSO VGS=- 3V -+-500nA ~~hichever or 100% is greater BVGDO IGo=-10 11 A +20% 20% VGF IG F=1 11 A +20% --20% NF Vos=2V, 10=10mA f=12GHZ -t. O.2dB O.2dB Ga +. O.5dB ---O.5dB |
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